PART |
Description |
Maker |
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
FLL810IQ-4C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
FLL200IB-1 FLL200IB-2 FLL200IB-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLU17ZM |
From old datasheet system L-Band Medium & High Power GaAs FET
|
Fujitsu Microelectronics Fujitsu Component Limited.
|